一、General Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
二、Features
4.0A, 650V, RDS(on) = 3.0Ω @VGS = 10 V
Low gate charge ( typical 15nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability