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深圳市迅瑞创芯科技有限公司

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SI4N60(高压MOSFET) 当前位置:首页 > MOSFET场效应管 > SI4N60(高压MOSFET)

SI4N60(高压MOSFET)
  
一、DESCRIPTION
TheSI4N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits.

二、FEATURES
RDS(ON)=2.5Ω@VGS=10V
Ultra Low gate charge(tupical 15.0nC)
Low reverse transfer capacitance(CRSS=typica8.0pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability,high ruggedness