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深圳市英瑞尔芯科技有限公司

地   址:深圳市福田区振华路现代之窗A座7B

联系人:刘小姐

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STGWA40H65DFB 当前位置:首页 > ST/意法半导体 > STGWA40H65DFB

STGWA40H65DFB
  


产品属性



类型
描述
选择
类别
Discrete Semiconductor Products
Transistors - IGBTs - Single
Mfr
STMicroelectronics
Series
HB
Package
Tube
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
160 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Power - Max
283 W
Switching Energy
498µJ (on), 363µJ (off)
Input Type
Standard
Gate Charge
210 nC
Td (on/off) @ 25°C
40ns/142ns
Test Condition
400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)
62 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 Long Leads
Base Product Number
STGWA40


相关标签:IGBT,STGWA40H65DFB,
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