DESCRIPTION
The 2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
FEATURE
* -20V/-4.3A, RDS(ON)=30mΩ (typ.)@VGS=-4.5V
* -20V/-3.5A,RDS(ON)=40mΩ (typ.)@VGS=-2.5V
* -20V/-2.0A,RDS(ON)=56mΩ (typ.)@VGS=-1.8V
* -20V/-1.0A,RDS(ON)=85mΩ (typ.)@VGS=-1.5V
* Super high design for extremely low RDS(ON)
* Exceptional on-resistance and Maximum DC current capability
* Full RoHS compliance
* package design
APPLICATIONS
* Power Management
* Portable Equipment
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter