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深圳市迅瑞创芯科技有限公司

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HX80N03ND(N+NMOS) 当前位置:首页 > MOSFET场效应管 > HX80N03ND(N+NMOS)

HX80N03ND(N+NMOS)
  
Description:
  The 80N03ND is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
  The 80N03ND meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features:
* 100% EAS Guaranteed
* Green Device Available
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology