您好!欢迎光临深圳市迅瑞创芯科技有限公司官方网站!
产品展示
新闻动态
联系我们

深圳市迅瑞创芯科技有限公司

地   址:深圳市宝安区西乡街道前进二路149号智汇创新中心A座8层803室

联系人:

电   话:0755-86003350

微   信:13480769332

TF080P04K(P-MOS) 当前位置:首页 > MOSFET场效应管 > TF080P04K(P-MOS)

TF080P04K(P-MOS)
  
● General Description
The TF080P04 Kcombines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON。This device is ideal for load switch
and battery protection applications。
● Features
Advance high cell density Trench technology
Low RDS(ON) to minimize conductive loss
Low Gate Charge for fast switching
Low Thermal resistance
●Application
MB/VGA Vcore
SMPS 2nd Synchronous Rectifier
POL application
BLDC Motor driver