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深圳市迅瑞创芯科技有限公司

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TF20N03(N-MOS) 当前位置:首页 > MOSFET场效应管 > TF20N03(N-MOS)

TF20N03(N-MOS)
  
Description
The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply