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TF20N03(N-MOS) 当前位置:首页 > MOSFET场效应管 > TF20N03(N-MOS)

TF20N03(N-MOS)
  
Description
The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply