一、Description
The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
二、General Features
1.N-Channel
VDS = 40V,ID =8.0A
RDS(ON) < 22mΩ @ VGS=10V
RDS(ON) < 31mΩ@ VGS=4.5V
2.P-Channel
VDS = -40V,ID = -7.0A
RDS(ON) < 35mΩ @ VGS=-10V
RDS(ON) < 48mΩ @ VGS=-4.5V
3.High power and current handing capability
4.Lead free product is acquired
5.Surface mount package