XR2221 N+P双通道场效应管，低导通内阻
General Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
Fast switching
Green Device Available
Applications
Notebook
Load Switch
Networking
Hand-held Instruments
